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IS61LV12816L-10TL

IS61LV12816L-10TL

ISSI, Integrated Silicon Solution Inc
SRAM - Asynchronous Memory IC 2Mbit Parallel 10 ns 44-TSOP II
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Overview

The IS61LV12816L-10TL is a high-speed, 2Mbit asynchronous static RAM organized as 128K words by 16 bits. It operates on a 3.3V supply and features a rapid 10 ns access time, making it suitable for high-performance embedded systems requiring zero-wait-state memory access. The device is fully static, requiring no external clock or refresh cycles to maintain data integrity.

Why Choose This Part

This SRAM offers a fast 10 ns access time and features separate upper-byte and lower-byte controls (LB and UB) for flexible 8-bit or 16-bit data bus management. Its fully static operation simplifies design by eliminating the need for complex refresh circuitry, while the TSOP-II package provides a compact footprint for space-constrained PCB layouts.

Applications

Microcontroller Memory Expansion
Provides additional high-speed workspace for MCUs with external memory interfaces that lack sufficient internal RAM for large data buffers.
Communication Buffering
Acts as a high-speed buffer for networking equipment and industrial controllers to manage data bursts and protocol stacks.
Digital Signal Processing
Supports real-time DSP applications by providing fast 10 ns access to coefficients and intermediate calculation data.
Embedded Systems Cache
Serves as an external cache or scratchpad memory for processors requiring low-latency parallel memory access.

Key Specifications

Technology SRAM - Asynchronous
Access Time 10 ns
Memory Size 2Mbit
Memory Type Volatile
Memory Format SRAM
Mounting Type Surface Mount
Package / Case 44-TSOP (0.400", 10.16mm Width)
Memory Interface Parallel
Voltage - Supply 3.135V ~ 3.6V
Memory Organization 128K x 16
Operating Temperature 0degC ~ 70degC (TA)
Supplier Device Package 44-TSOP II
Write Cycle Time - Word, Page 10ns

Getting Started

To interface with this device, connect the 17-bit address bus and 16-bit data bus to a microcontroller's External Memory Interface (EMIF) or a FPGA. Ensure the VDD supply is between 3.135V and 3.6V and implement proper decoupling capacitors near the power pins. Configure your memory controller for asynchronous access, matching the 10 ns timing requirements specified in the datasheet.

Categories

Memory & Storage > SRAM