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IS61LV25616AL-10TL

IS61LV25616AL-10TL

ISSI
SRAM 4Mb 256Kx16 10ns Async SRAM 3.3v
7,146 in stock

Overview

The IS61LV25616AL-10TL is a high-speed, 4Mbit asynchronous CMOS static RAM organized as 256K words by 16 bits. It operates on a single 3.3V power supply and features a rapid 10ns access time, making it suitable for high-performance buffered memory applications.

Why Choose This Part

This SRAM offers fully static operation, eliminating the need for complex refresh circuitry or external clocks. Its asynchronous interface with separate upper and lower byte controls provides flexible data management and eases integration with various 16-bit bus architectures.

Applications

Microprocessor Cache
Used as a high-speed external cache memory for legacy or high-performance embedded processors requiring fast data retrieval.
Communication Buffering
Acts as a temporary data buffer in networking equipment and industrial communication controllers to manage high-speed data streams.
Embedded Computing
Provides volatile working memory for embedded systems where a simple, non-multiplexed parallel interface is preferred over DRAM.
Instrumentation and Control
Serves as data storage in high-speed digital signal acquisition systems where 10ns cycle times are required.

Key Specifications

Technology SRAM - Asynchronous
Access Time 10 ns
Memory Size 4Mbit
Memory Type Volatile
Memory Format SRAM
Mounting Type Surface Mount
Package / Case 44-TSOP (0.400", 10.16mm Width)
Memory Interface Parallel
Voltage - Supply 3.135V ~ 3.6V
Memory Organization 256K x 16
Operating Temperature 0degC ~ 70degC (TA)
Supplier Device Package 44-TSOP II
Write Cycle Time - Word, Page 10ns

Getting Started

To use this device, interface the 18-bit address bus and 16-bit data bus directly to your microcontroller's external memory interface (EMIF) or FSMC. Ensure the 3.3V supply is well-decoupled and that PCB trace lengths for the 10ns timing signals are kept short to minimize signal integrity issues.

Also Consider

CY7C1041G30-10ZSXI IFXInfineon Technologies - A high-performance 4Mbit asynchronous SRAM alternative with similar 10ns access speeds and package footprint.