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IS61LV25616AL-10TLI

IS61LV25616AL-10TLI

ISSI, Integrated Silicon Solution Inc
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 44-TSOP II
Active2,757 in stock
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Overview

The IS61LV25616AL-10TLI is a high-speed, 4Mbit asynchronous CMOS static RAM organized as 256K words by 16 bits. It operates on a 3.3V nominal power supply and features a rapid 10ns access time, making it suitable for high-performance embedded systems requiring immediate data availability. The device is designed for fully static operation, meaning it requires no external clock or refresh cycles to maintain data integrity.

Why Choose This Part

This SRAM offers byte-level control through Upper Byte (UB) and Lower Byte (LB) signals, allowing flexible 8-bit or 16-bit data bus interfacing. Its CMOS construction ensures low power consumption with a standby current of 20mA (industrial) while maintaining high-speed TTL compatibility. The asynchronous architecture simplifies system design by eliminating the need for complex memory controllers or clock synchronization.

Applications

Embedded Buffering
Acts as a high-speed data buffer between fast processors and slower peripherals in networking or industrial equipment.
Legacy Processor Memory Expansion
Provides external memory for 16-bit microcontrollers that lack sufficient internal RAM for RTOS or complex data structures.
Look-up Tables
Ideal for storing frequently accessed calibration data or look-up tables where 10ns latency is critical for system performance.
FPGA Workspace
Serves as external workspace memory for FPGAs in signal processing tasks that require byte-addressable, non-volatile-like access speeds.

Key Specifications

Technology SRAM - Asynchronous
Access Time 10 ns
Memory Size 4Mbit
Memory Type Volatile
Memory Format SRAM
Mounting Type Surface Mount
Package / Case 44-TSOP (0.400", 10.16mm Width)
Memory Interface Parallel
Voltage - Supply 3.135V ~ 3.6V
Memory Organization 256K x 16
Operating Temperature -40degC ~ 85degC (TA)
Supplier Device Package 44-TSOP II
Write Cycle Time - Word, Page 10ns

Getting Started

When integrating this SRAM, ensure that the 3.3V supply is well-decoupled with 0.1uF ceramic capacitors placed close to the VDD pins to handle transient currents during high-speed switching. Design the PCB traces for the 16-bit parallel bus with equal lengths to minimize skew, especially when operating near the 10ns access limit. Engineers can interface this directly to the External Memory Interface (EMIF) or Flexible Static Memory Controller (FSMC) peripherals found on many modern microcontrollers.

IS61LV25616AL-10 Family

Comparing specs that differ across variants. The current part is highlighted.

Part Number Temp Range Stock
IS61LV25616AL-10TLI (this part) -40degC ~ 85degC (.. 2,757
IS61LV25616AL-10TL (ISSI) 0degC ~ 70degC (TA) 7,146

Also Consider

CY7C1041G30-10ZSXI IFXInfineon Technologies - A 4Mbit asynchronous SRAM alternative with similar 10ns access times and a standard 44-pin TSOP II package.