IS61WV25616EDBLL-10BLI
Overview
The IS61WV25616EDBLL-10BLI is a high-speed 4Mbit asynchronous CMOS static RAM organized as 256K words by 16 bits. It operates on a low-voltage supply range of 2.4V to 3.6V and features a fast access time of 10 ns. This memory includes integrated Error Correction Code (ECC) to enhance reliability in demanding embedded environments.
Why Choose This Part
This SRAM provides superior reliability via on-chip Error Correction Code (ECC) that detects and corrects single-bit errors per byte. It offers a low-power standby mode at 5 mA (typical) and a high-speed parallel interface that eliminates the latency associated with serial memory protocols.
Applications
Key Specifications
Getting Started
To integrate this part, ensure the memory controller supports an asynchronous parallel interface with 16-bit data width. Connect the address lines, data lines, and control signals (OE, WE, CE, LB, UB) according to the 48-TFBGA pinout. Decouple the VDD pins with 0.1uF capacitors placed close to the device power pins.
IS61WV25616EDBLL-10 Family
| Part Number | Difference | Stock |
|---|---|---|
| IS61WV25616EDBLL-10TLI (ISSI) | TLI | 903 |
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