IS61WV25616EDBLL-10TLI
Overview
The IS61WV25616EDBLL-10TLI is a high-speed, 4Mb asynchronous CMOS Static RAM organized as 256K words by 16 bits. It features integrated Error Correction Code (ECC) to detect and correct single-bit errors per byte, significantly enhancing data reliability in demanding environments. Operating between 2.4V and 3.6V, this memory provides a fast 10ns access time while maintaining low power consumption with a typical standby current of 10uA.
Why Choose This Part
The primary advantage is the built-in ECC logic, which provides a transparent reliability upgrade over standard SRAM without requiring software overhead. It combines 10ns high-speed performance with an ultra-low standby current of 1.5uA (typical at 25C), making it suitable for battery-backed applications. The TSOP-II 44-pin package and standard asynchronous interface allow it to serve as a drop-in replacement for older non-ECC 4Mb SRAM designs.
Applications
Getting Started
To interface with a microcontroller or FPGA, connect the 18-bit address bus and 16-bit data bus along with standard control signals (CE, OE, WE). Ensure your memory controller is configured for asynchronous timings with a minimum 10ns cycle time. Since the ECC is handled entirely on-chip, no special software routines are required to manage error detection or correction.
IS61WV25616EDBLL-10 Family
| Part Number | Difference | Stock |
|---|---|---|
| IS61WV25616EDBLL-10BLI (ISSI, Integrated Silicon Solution Inc) | BLI | — |
