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IS61WV6416BLL-12TLI

IS61WV6416BLL-12TLI

ISSI
SRAM 1Mb 64Kx16 12ns/3.3v Async SRAM 3.3v
232 in stock

Overview

The IS61WV6416BLL-12TLI is a high-speed, 1-Mbit asynchronous CMOS static RAM organized as 64K words by 16 bits. It operates from a single 3.3V power supply and features a fast access time of 12ns, making it suitable for high-performance embedded systems requiring immediate data retrieval without a clock signal.

Why Choose This Part

This SRAM offers fully static operation, eliminating the need for complex refresh cycles or external clocks. It includes dedicated byte control for upper and lower byte access, and its low standby current of 50uA makes it efficient for power-sensitive designs.

Applications

Microcontroller Memory Expansion
Provides external data storage for MCUs with parallel memory interfaces that require more RAM than available on-chip for buffers or stacks.
Communication Buffers
Acts as a high-speed scratchpad or temporary buffer in networking equipment and industrial communication modules.
Embedded Systems Processing
Used in real-time control systems where low latency and predictable access times are critical for stability.

Key Specifications

Technology SRAM - Asynchronous
Access Time 12 ns
Memory Size 1Mbit
Memory Type Volatile
Memory Format SRAM
Mounting Type Surface Mount
Package / Case 44-TSOP (0.400", 10.16mm Width)
Memory Interface Parallel
Voltage - Supply 3V ~ 3.6V
Memory Organization 64K x 16
Operating Temperature -40degC ~ 85degC (TA)
Supplier Device Package 44-TSOP II
Write Cycle Time - Word, Page 12ns

Getting Started

To interface with this device, connect the 16-bit data bus and address lines to a microcontroller's External Memory Interface (EMC or FSMC). Ensure that the trace lengths for the 12ns timing are kept short and properly terminated to avoid signal integrity issues. Use standard TTL logic levels and verify the 3.3V supply rails are stable during peak 40mA operation.

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