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IS62WV1288BLL-55HLI

IS62WV1288BLL-55HLI

ISSI, Integrated Silicon Solution Inc
SRAM - Asynchronous Memory IC 1Mbit Parallel 55 ns 32-sTSOP I
Active3,026 in stock
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Overview

The IS62WV1288BLL-55HLI is a 1Mbit high-speed, low-power CMOS static RAM organized as 128K words by 8 bits. It operates on a supply voltage range of 2.5V to 3.6V and features a fast 55ns access time with very low standby power consumption of 10uA. This asynchronous memory device is housed in a compact 32-pin sTSOP Type I package, making it suitable for space-constrained industrial applications.

Why Choose This Part

The component offers a significant advantage in power efficiency with a maximum standby current of only 10uA, extending battery life in portable designs. Its asynchronous design simplifies the interface by eliminating the need for a clock signal, reducing design complexity. Furthermore, the 55ns access time ensures rapid data retrieval for performance-sensitive embedded tasks.

Applications

Industrial Control Systems
Used as reliable buffer memory or working RAM for PLC and automation controllers requiring industrial temperature ranges.
Embedded Systems Expansion
Provides additional volatile storage for microcontrollers with limited internal RAM through a standard parallel interface.
Battery-Powered Handhelds
The low standby current of 10uA makes it ideal for data logging and portable instruments where power conservation is critical.
Communication Buffers
Facilitates high-speed data buffering in networking equipment and communication modules.

Key Specifications

Technology SRAM - Asynchronous
Access Time 55 ns
Memory Size 1Mbit
Memory Type Volatile
Memory Format SRAM
Mounting Type Surface Mount
Package / Case 32-TFSOP (0.465", 11.80mm Width)
Memory Interface Parallel
Voltage - Supply 2.5V ~ 3.6V
Memory Organization 128K x 8
Operating Temperature -40degC ~ 85degC (TA)
Supplier Device Package 32-sTSOP I
Write Cycle Time - Word, Page 55ns

Getting Started

To integrate this SRAM, connect the 17 address lines and 8 data lines to your microcontroller's external memory interface (EMI) or GPIO pins. Ensure the VDD supply is decoupled with 0.1uF capacitors near the pins and verify that your MCU logic levels are compatible with the 2.5V to 3.6V range. Since it is asynchronous, timing is controlled by the Chip Enable (CE), Output Enable (OE), and Write Enable (WE) signals as specified in the datasheet timing diagrams.

Also Consider

AS6C1008-55TIN Alliance Memory, Inc. - Provides a 1Mbit 128Kx8 alternative with identical 55ns timing and industrial temperature rating.

Categories

Memory & Storage > SRAM