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IS62WV25616BLL-55TLI

IS62WV25616BLL-55TLI

ISSI, Integrated Silicon Solution Inc
SRAM - Asynchronous Memory IC 4Mbit Parallel 55 ns 44-TSOP II
Active2,181 in stock

Overview

The IS62WV25616BLL-55TLI is a 4Mbit asynchronous CMOS static RAM organized as 256K words by 16 bits. It operates on a low-voltage supply range of 2.5V to 3.6V and features a fast 55ns access time suitable for high-performance embedded systems. This memory is fully static, requiring no external clock or refresh cycles, which simplifies the interface design for various microcontrollers and digital signal processors.

Why Choose This Part

This SRAM offers extremely low power consumption with a standby current of only 15uA and a maximum operating current of 40mA. The dual-byte control (upper and lower bytes) allows for flexible 8-bit or 16-bit data bus interfacing. Its asynchronous architecture and TTL-compatible levels eliminate the complexity of timing controllers required by DRAM or synchronous memory types.

Applications

Buffer Memory for DSPs
Provides high-speed data buffering for digital signal processors that require fast parallel access to temporary data sets.
Embedded System Expansion RAM
Extends the available workspace for MCUs that lack sufficient internal RAM for RTOS stacks or large data arrays.
Industrial Control Systems
Reliable data storage for PLC modules and industrial automation equipment operating in the industrial temperature range of -40C to 85C.
Communication Equipment Buffering
Used as a packet buffer or lookup table storage in networking hardware requiring low-latency parallel memory interfaces.

Key Specifications

Technology SRAM - Asynchronous
Access Time 55 ns
Memory Size 4Mbit
Memory Type Volatile
Memory Format SRAM
Mounting Type Surface Mount
Package / Case 44-TSOP (0.400", 10.16mm Width)
Memory Interface Parallel
Voltage - Supply 2.5V ~ 3.6V
Memory Organization 256K x 16
Operating Temperature -40degC ~ 85degC (TA)
Supplier Device Package 44-TSOP II
Write Cycle Time - Word, Page 55ns

Getting Started

To integrate this SRAM, connect the 18-bit address bus and 16-bit data bus to your processor's external memory interface (EMIF) or FSMC. Ensure the VDD supply is decoupled with 0.1uF capacitors near the power pins and manage the Chip Select (CS), Output Enable (OE), and Write Enable (WE) signals according to the 55ns timing diagrams. The 44-pin TSOP-II package is suitable for standard SMT reflow profiles and can be easily prototyped on adapter boards.

Also Consider

AS6C4016-55ZIN Alliance Memory, Inc. - Provides identical 256K x 16 organization and 55ns access time with high reliability for long-term availability.