IFXISC0702NLS
Overview
The ISC0702NLS is an OptiMOS N-channel 60V power MOSFET in a PG-TDSON-8 package, designed for high-efficiency power conversion. It features a very low Rds(on) of 2.8mOhm and is optimized for high-frequency switching and battery charging applications. With a junction temperature rating of up to 175 degrees Celsius, it provides high reliability in thermally demanding environments.
Why Choose This Part
This MOSFET offers an excellent figure of merit with a maximum Rds(on) of 2.8mOhm, significantly reducing conduction losses. It is 100% avalanche tested and features superior thermal resistance, allowing for a 100W power dissipation rating when properly heat-sinked.
Applications
Key Specifications
Getting Started
When designing with the ISC0702NLS, ensure the PG-TDSON-8 footprint includes thermal vias to the PCB ground plane to manage the 100W maximum power dissipation. Use a logic-level gate driver capable of handling the gate charge for high-frequency operation, as the device reaches its full rated Rds(on) at 10V Vgs.




