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ISC0703NLS

IFXISC0703NLS

MPN: ISC0703NLSATMA1
Infineon Technologies
N-Channel 60 V 13A (Ta), 57A (Tc) 3W (Ta), 44W (Tc) Surface Mount PG-TDSON-8
Active36,550 in stock

Overview

The ISC0703NLS is an N-Channel 60V logic-level Power MOSFET in a PG-TDSON-8 package, designed for high-frequency switching and high power density applications. It features a low Rds(on) of 6.9mOhm and is optimized for low gate charge to reduce switching losses in power conversion stages. With a maximum junction temperature rating of 175 degrees Celsius, it is suitable for demanding thermal environments.

Why Choose This Part

The component offers a high continuous drain current of up to 57A (Tc) and is 100% avalanche tested for robust performance under inductive loads. Its logic-level gate threshold allows it to be driven directly by 5V microcontrollers while maintaining a low gate charge of 23nC for efficient high-frequency operation.

Applications

Battery Management Systems (BMS)
Ideal for battery protection and cell balancing circuits in cordless power tools and e-bikes due to its low on-state resistance.
Synchronous Rectification
Used in the secondary side of AC/DC and DC/DC converters to improve efficiency in high-speed chargers.
BLDC Motor Drives
Acts as an efficient switching element in three-phase inverter bridges for small industrial motors and robotics.

Key Specifications

FET Type N-Channel
Vgs (Max) +/-20V
Technology MOSFET (Metal Oxide)
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Vgs(th) (Max) @ Id 2.3V @ 15uA
Operating Temperature -55degC ~ 175degC (TJ)
Rds On (Max) @ Id, Vgs 6.9mOhm @ 32A, 10V
Power Dissipation (Max) 3W (Ta), 44W (Tc)
Supplier Device Package PG-TDSON-8
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
Drain to Source Voltage (Vdss) 60 V
Input Capacitance (Ciss) (Max) @ Vds 1400 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25degC 13A (Ta), 57A (Tc)

Getting Started

To evaluate this MOSFET, utilize a standard power electronics prototyping board with thermal vias to manage the PG-TDSON-8 footprint heat dissipation. Ensure your gate driver can provide sufficient peak current to transition the 1400pF input capacitance quickly in high-frequency switching designs.

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