MAPC-A4029-ABSB1
Overview
The MAPC-A4029-ABSB1 is a dedicated evaluation board for the MAPC-A4029 Gallium Nitride (GaN) on Silicon Carbide (SiC) power amplifier. It is designed for high-power pulsed applications operating in the S-band frequency range of 2.7GHz to 3.1GHz. This platform allows for the verification of the amplifier's 1100W peak power performance and efficiency in a controlled test environment.
Why Choose This Part
The board features an internally matched 50 Ohm RF interface to simplify system integration and testing. Its GaN-on-SiC technology supports high temperature operation up to 125 degrees Celsius, while the 65V typical drain voltage provides significant power density for S-band pulsed systems.
Applications
Key Specifications
Getting Started
To evaluate the device, connect the board to a suitable pulse generator and high-voltage power supply capable of supporting the 65V Vds requirement. Ensure a proper heat sink is attached to the metal flange package before applying RF power to prevent thermal damage. Monitor the drain current up to the 14A maximum rating during pulsed operation.
