MAPC-A4030-ABSB1
Overview
The MAPC-A4030-ABSB1 is a dedicated evaluation board for the MAPC-A4030, a high-power Gallium Nitride (GaN) on Silicon carbide power amplifier. This system is designed for pulsed applications operating in the 3.1 GHz to 3.5 GHz frequency range, delivering up to 700 W of output power. The board provides a pre-characterized environment for verifying the amplifier's 11.5 dB large signal gain and 57 percent drain efficiency.
Why Choose This Part
This evaluation board features an internally matched 50 Ohm interface, greatly simplifying the integration process into existing RF signal chains. The GaN-on-SiC technology provides superior thermal conductivity and high-temperature operation up to 125 degrees Celsius, while maintaining a high drain efficiency of 57 percent.
Applications
Key Specifications
Getting Started
To use this board, connect a 50 Ohm RF source to the input and ensure the output is connected to a high-power load or attenuator capable of handling 700 W peak pulses. Apply a drain voltage (VDD) within the specified operating range and set the gate bias (IDQ) to 500mA as recommended in the datasheet. Ensure adequate heatsinking is provided for the ceramic-metal flange package during high-duty cycle testing.
