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MCP1402T-E/OT

MCHPMCP1402T-E/OT

Microchip Technology
Low-Side Gate Driver IC Non-Inverting SOT-23-5
Active58,295 in stock

Overview

The MCP1402T-E/OT is a high-speed, single-output, low-side MOSFET driver capable of providing 500 mA of peak current. Operating from a wide 4.5V to 18V supply, it translates low-voltage TTL/CMOS logic signals into high-current gate drive pulses to efficiently switch power MOSFETs and IGBTs. The device features matched rise and fall times of 19ns and 15ns respectively, minimizing power loss during switching transitions.

Why Choose This Part

This driver is latch-up protected and highly resistant to reverse current, capable of withstanding up to 0.5A of peak output current. It features low shoot-through current and matched propagation delays, which are critical for high-efficiency power conversion. The SOT-23-5 package provides a compact footprint for space-constrained designs while maintaining a wide operating temperature range up to 125 degrees Celsius.

Applications

Switch Mode Power Supplies (SMPS)
Used as a primary gate driver to switch power MOSFETs at high frequencies while minimizing switching losses.
Pulse Transformer Drive
Provides the necessary peak current to drive pulse transformers for signal isolation or gate drive applications.
Motor and Solenoid Control
Acts as a buffer between microcontrollers and inductive loads to handle high-current switching requirements.
Line Drivers
Serves as a robust buffer for driving capacitive lines or communication buses that require high current drive.

Key Specifications

Gate Type IGBT, MOSFET (N-Channel, P-Channel)
Input Type Non-Inverting
Channel Type Single
Mounting Type Surface Mount
Package / Case SC-74A, SOT-753
Voltage - Supply 4.5V ~ 18V
Number of Drivers 1
Driven Configuration Low-Side
Operating Temperature -40degC ~ 150degC (TJ)
Rise / Fall Time (Typ) 19ns, 15ns
Supplier Device Package SOT-23-5
Logic Voltage - VIL, VIH 0.8V, 2.4V
Current - Peak Output (Source, Sink) 500mA, 500mA

Getting Started

To implement the MCP1402T-E/OT, place a high-quality ceramic bypass capacitor (0.1uF to 1.0uF) as close as possible to the VDD and GND pins to handle peak current demands. Ensure signal traces to the MOSFET gate are short and wide to minimize parasitic inductance. Evaluation can be performed using generic SOT-23 breakout boards or custom PCBs designed for power switching applications.