MR25H10CDC
Overview
The MR25H10CDC is a 1Mbit magnetoresistive RAM (MRAM) organized as 128K x 8, offering the speed of SRAM with the non-volatility of Flash. It features a 40 MHz SPI interface and provides unlimited write endurance, making it ideal for applications requiring frequent data logging or real-time state storage without the wear-out concerns of traditional EEPROM. The device operates from a 2.7V to 3.6V supply and includes automatic data protection to prevent corruption during power loss.
Why Choose This Part
The primary advantage is unlimited write endurance combined with zero write delays, allowing the system to write data at the full 40 MHz clock speed without waiting for a 'write cycle' time. It provides high reliability with over 20 years of data retention and a very low 7 uA sleep mode current for battery-constrained designs. The 8-DFN package is footprint-compatible with many serial Flash and EEPROM devices, enabling a high-performance drop-in upgrade.
Applications
Key Specifications
Getting Started
Interfacing involves standard SPI Mode 0 or Mode 3 protocols using the SI, SO, SCK, and CS pins. Because there is no write delay, firmware can be simplified by removing the polling loops or 'ready bit' checks required for EEPROM. Use the WP pin to protect memory blocks and the SLEEP pin to enter the 7 uA ultra-low power state during periods of inactivity.
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