MR25H10CDF

Overview

The MR25H10CDF is a 1Mbit Magnetoresistive RAM (MRAM) organized as 128K x 8, offering the speed of SRAM with the non-volatility of Flash. It utilizes a high-speed SPI interface supporting up to 40 MHz clock rates and operates on a 2.7V to 3.6V supply range. Unlike traditional non-volatile memories, this MRAM provides unlimited write endurance and requires no write delays, making it ideal for high-frequency data logging.

Why Choose This Part

The primary advantage is unlimited write endurance, which eliminates the wear-leveling complexity required for Flash-based storage. It features a 20-year data retention period and automatic data protection during power-down, ensuring data integrity in harsh industrial environments. Its 40 MHz SPI interface and zero-latency writes allow it to serve as a direct, high-performance replacement for serial EEPROM or FeRAM.

Applications

Getting Started

Integration is straightforward using standard SPI drivers available in most MCU HAL libraries, as the device mimics common EEPROM command sets. Engineers should ensure the VDD supply remains within the 2.7V to 3.6V range and implement the 'Small Flag' DFN footprint according to the manufacturer's thermal pad recommendations. Evaluation can be performed by interfacing the 8-pin DFN with an SPI-capable microcontroller like an STM32 or AVR.

MR25H10 Family

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