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NDT2955

ONNDT2955

onsemi
P-Channel 60 V 2.5A (Ta) 3W (Ta) Surface Mount SOT-223-4
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Overview

The NDT2955 is a P-Channel MOSFET designed for high-density surface mount applications using onsemi high cell density, DMOS technology. It features a 60V drain-to-source breakdown voltage and is capable of handling up to 2.5A of continuous drain current. This device is specifically packaged in a SOT-223 for improved thermal performance in a small footprint.

Why Choose This Part

The NDT2955 offers a high power dissipation rating of 3W (Ta) in a compact SOT-223-4 package, making it more thermally efficient than standard SOT-23 alternatives. With a maximum Rds(on) of 300mOhm at 10V Vgs, it balances low conduction losses with a wide operating temperature range of -55 to 150 degrees Celsius.

Applications

High-Side Load Switching
Used to control power delivery to peripherals in 12V, 24V, or 48V DC systems where P-Channel configuration simplifies gate drive circuitry.
DC-DC Conversion
Suitable for use in non-isolated buck converters and power management modules requiring low on-resistance and fast switching.
Battery Management
Ideal for battery protection circuits and charging paths due to its ability to handle continuous currents up to 2.5A.
Motor Control
Can be utilized in H-bridge configurations or as a simple switch for small DC motors and actuators.

Key Specifications

FET Type P-Channel
Vgs (Max) +/-20V
Technology MOSFET (Metal Oxide)
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Vgs(th) (Max) @ Id 4V @ 250uA
Operating Temperature -55degC ~ 150degC (TJ)
Rds On (Max) @ Id, Vgs 300mOhm @ 2.5A, 10V
Power Dissipation (Max) 3W (Ta)
Supplier Device Package SOT-223-4
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Drain to Source Voltage (Vdss) 60 V
Input Capacitance (Ciss) (Max) @ Vds 601 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25degC 2.5A (Ta)

Getting Started

To integrate this MOSFET, ensure the SOT-223 thermal pad is soldered to a sufficiently large copper pour to manage heat at higher current loads. Validate gate drive voltages to stay within the +/-20V Vgs limit while ensuring the gate source exceeds the 4V threshold for reliable conduction.

Also Consider

IRFL9110 IFXInfineon Technologies - Provides a higher 100V breakdown voltage for applications requiring more voltage headroom than the 60V rating of the NDT2955.