ONNTF2955T1G
onsemi
P-Channel 60 V 1.7A (Ta) 1W (Ta) Surface Mount SOT-223 (TO-261)
Active26,571 in stock
Overview
The onsemi NTF2955T1G is a P-Channel Power MOSFET designed for surface mount applications. It features a TMOS7 design, offering low on-resistance (RDS(on)) and enhanced efficiency in power switching circuits. This device can withstand high energy in both avalanche and commutation modes.
Why Choose This Part
This MOSFET offers a low on-resistance of 185mOhm at 2.4A, 10V, which helps minimize power losses and improve efficiency. Its ability to withstand high energy in avalanche and commutation modes enhances reliability in demanding applications. The wide operating temperature range of -55degC to 155degC ensures robust performance across diverse environmental conditions.
Applications
DC-DC Converters
Used as a switching element in various DC-DC converter topologies for power management.
Load Switching
Functions as a high-side or low-side switch for controlling power to different loads in a system.
Motor Control
Suitable for driving small DC motors or other inductive loads due to its robust avalanche characteristics.
Battery Powered Devices
Ideal for power management and switching functions in portable and battery-operated equipment.
General Purpose Power Switching
Applicable in various circuits requiring efficient power switching, with a -60V VDD_max_v and -2.6A Iout_max_a.
Key Specifications
FET Type
P-Channel
Vgs (Max)
+/-20V
Technology
MOSFET (Metal Oxide)
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Vgs(th) (Max) @ Id
4V @ 1mA
Operating Temperature
-55degC ~ 155degC (TJ)
Rds On (Max) @ Id, Vgs
185mOhm @ 2.4A, 10V
Power Dissipation (Max)
1W (Ta)
Supplier Device Package
SOT-223 (TO-261)
Gate Charge (Qg) (Max) @ Vgs
14.3 nC @ 10 V
Drain to Source Voltage (Vdss)
60 V
Input Capacitance (Ciss) (Max) @ Vds
492 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Current - Continuous Drain (Id) @ 25degC
1.7A (Ta)
