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NTF5P03T3G

ONNTF5P03T3G

onsemi
P-Channel 30 V 3.7A (Ta) 1.56W (Ta) Surface Mount SOT-223 (TO-261)
Active5,772 in stock

Overview

The NTF5P03T3G is a 30V P-Channel Power MOSFET designed for high-efficiency switching and power management applications. Housed in a compact SOT-223 package, it supports a continuous drain current of up to 5.2A and features logic-level gate drive compatibility for direct control from microcontrollers. This AEC-Q101 qualified component is well-suited for automotive and industrial environments requiring a rugged, avalanche-rated power switch.

Why Choose This Part

The device offers an ultra-low RDS(on) of 100mOhm at 10V Vgs, which minimizes power loss and extends battery life in portable applications. Its AEC-Q101 qualification ensures high reliability under thermal stress, while the logic-level gate threshold allows for efficient operation in 3.3V and 5V systems.

Applications

High-Side Load Switching
Utilizes the P-channel architecture to simplify high-side switching without requiring an external charge pump or dedicated gate driver.
DC-DC Converters
Acts as a primary switch in buck or boost topologies where space is limited and efficiency is critical.
Motor Control
Suitable for driving small DC motors or inductive loads in industrial and automotive auxiliary systems.
Battery Management Systems
Provides low-loss reverse battery protection and power path management in portable electronic devices.

Key Specifications

FET Type P-Channel
Vgs (Max) +/-20V
Technology MOSFET (Metal Oxide)
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Vgs(th) (Max) @ Id 3V @ 250uA
Operating Temperature -55degC ~ 150degC (TJ)
Rds On (Max) @ Id, Vgs 100mOhm @ 5.2A, 10V
Power Dissipation (Max) 1.56W (Ta)
Supplier Device Package SOT-223 (TO-261)
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V
Drain to Source Voltage (Vdss) 30 V
Input Capacitance (Ciss) (Max) @ Vds 950 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25degC 3.7A (Ta)

Getting Started

When integrating this MOSFET, ensure the SOT-223 drain tab is soldered to a sufficient copper plane to manage its 1.56W power dissipation. Use a standard 10V gate drive for optimal performance, though the device will function effectively at lower logic levels. For automotive designs, refer to the NVF5P03T3G variant for full PPAP documentation and traceability.