ONNTR4501NT1G
Overview
The NTR4501NT1G is an N-Channel Power MOSFET designed for efficient power management and switching in space-constrained applications. It offers a low drain-to-source resistance of 80mOhm at 4.5V gate drive and can handle continuous drain currents up to 3.2A. Its SOT-23 footprint makes it suitable for low-profile consumer and industrial electronics.
Why Choose This Part
This MOSFET features leading planar technology for low gate charge and fast switching speeds, reducing power losses. It is specifically rated for 2.5V operation, allowing it to be driven directly by low-voltage microcontrollers. The SOT-23 package provides a reliable surface mount solution with a maximum power dissipation of 1.25W.
Applications
Key Specifications
Getting Started
When integrating this MOSFET, ensure the gate-to-source voltage does not exceed the +/-12V limit. Use standard PCB footprints for SOT-23 (TO-236) and provide sufficient copper pour around the drain pin to manage thermal dissipation. No specialized software or IDE is required for this discrete component.




