OP265B
Overview
The OP265B is a high-intensity 890nm infrared emitting diode housed in a compact T-1 (3mm) plastic package. It utilizes Gallium Aluminum Arsenide (GaAlAs) technology to provide higher power output than standard GaAs emitters at equivalent drive currents. With a narrow 18-degree beam angle, it is designed for applications requiring high coupling efficiency and precise optical alignment.
Why Choose This Part
The OP265B features a narrow 18-degree half-power beam angle which focuses IR energy for efficient coupling with phototransistors or photodiodes. Its T-1 dome package is optimized for space-limited designs while maintaining a wide operating temperature range of -40 to +100 degrees Celsius. It is spectrally matched to Optek silicon sensors, simplifying the design of infrared communication and sensing pairs.
Applications
Key Specifications
Getting Started
To drive the OP265B, use a constant current source or a current-limiting resistor to ensure forward current does not exceed the 50mA maximum. For pulse-width modulation (PWM) control, verify that peak pulse currents remain within safe operating limits defined in the datasheet. Ensure the 890nm peak wavelength matches the peak sensitivity of your chosen photodetector for maximum system efficiency.
