EmbeddedRelated.com
Jacob Beningo
Live online course · Jacob Beningo
AI for Embedded Developers
$100 off for EmbeddedRelated readers until Nov 1 · 5 live sessions, Dec 7-11
Discount ends in
18days 03hrs 24min 59sec
Learn More →
    Parts    QRE1113
QRE1113

ONQRE1113

onsemi
Reflective Optical Sensor 0.039" (1mm) 4-DIP (0.157", 4.00mm)
Active26,319 in stock
Datasheet Digi-Key Mouser Compare Prices

Overview

The QRE1113 is a miniature reflective optical sensor consisting of an infrared emitting diode and an NPN silicon phototransistor. It is designed for non-contact surface sensing and features a compact 4-DIP package with a specialized sensing distance of 1mm. The device uses a phototransistor output to provide high sensitivity to reflected light from nearby objects.

Why Choose This Part

The miniature footprint makes it ideal for space-constrained designs where traditional optical sensors are too bulky. With a fast response time of 20 microseconds and a high collector-emitter breakdown voltage of 30V, it provides reliable switching and flexible integration with standard 5V or higher logic systems.

Applications

Line Following Robots
Detecting high-contrast lines on the floor by measuring the difference in infrared reflection.
Optical Encoders
Counting revolutions or determining speed by sensing markings on a rotating disk or shaft.
Object Presence Detection
Acting as a proximity switch to trigger actions when an object moves within its 1mm sensing range.
Paper Edge Detection
Commonly used in printers and office equipment to identify the beginning or end of a paper feed.

Key Specifications

Output Type Phototransistor
Mounting Type Through Hole
Response Time 20us, 20us
Package / Case 4-DIP (0.157", 4.00mm)
Sensing Method Reflective
Sensing Distance 0.039" (1mm)
Current - Collector (Ic) (Max) 20 mA
Current - DC Forward (If) (Max) 50 mA
Voltage - Collector Emitter Breakdown (Max) 30 V

Getting Started

To use the QRE1113, connect the internal LED with a current-limiting resistor to keep forward current below 50mA. Configure the phototransistor in a common-emitter circuit with a pull-up resistor (typically 10k ohms) at the collector to translate the light-dependent current into a readable voltage signal for an ADC or digital input pin.

QRE1113 Family

Comparing specs that differ across variants. The current part is highlighted.

Part Number Package Stock
QRE1113 (this part) DIP-4 26,319
QRE1113GR SMD-4 62,057