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S70FL01GSAGMFM010

IFXS70FL01GSAGMFM010

Infineon Technologies
NOR Flash Ser NOR Flash Memory 20
1,706 in stock
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Overview

The S70FL01GSAGMFM010 is a high-density 1Gbit SPI NOR Flash memory device utilizing Infineon MirrorBit 65 nm technology. It supports Quad I/O and Double Data Rate (DDR) interfaces, achieving clock frequencies up to 133 MHz to meet the high bandwidth requirements of modern embedded systems. This device is designed for high-reliability applications requiring 32-bit addressing and extended data retention of at least 20 years.

Why Choose This Part

This 1Gbit Flash device offers significant performance with Quad DDR read speeds and 133 MHz SDR operation. It provides high endurance with 100,000 program-erase cycles and incorporates Advanced Sector Protection (ASP) for secure boot and code integrity. The 16-pin SOIC package and 3.0V core make it compatible with a wide range of standard industrial controllers.

Applications

High-Performance Embedded Boot
Ideal for storing boot code and OS images in FPGA or SoC systems that require rapid initialization through Quad SPI or AutoBoot features.
Industrial Data Logging
Utilized in industrial systems for long-term configuration storage and event logging, benefiting from a wide -40C to +125C operating temperature range.
High-Resolution Display Assets
Provides high-speed read access for graphical assets and UI textures in automotive instrument clusters or medical interfaces.

Key Specifications

Technology FLASH - NOR
Memory Size 1Gbit
Memory Type Non-Volatile
Memory Format FLASH
Mounting Type Surface Mount
Package / Case 16-SOIC (0.295", 7.50mm Width)
Clock Frequency 133 MHz
Memory Interface SPI - Quad I/O
Voltage - Supply 2.7V ~ 3.6V
Memory Organization 128M x 8
Operating Temperature -40degC ~ 125degC (TA)
Supplier Device Package 16-SOIC

Getting Started

To interface with this memory, configure your microcontroller SPI peripheral for Mode 0 or Mode 3 and ensure the 32-bit addressing mode is enabled to access the full 1Gbit capacity. Hardware designers should place decoupling capacitors close to the VDD pins and follow high-speed signal integrity guidelines for 133 MHz operation. Validation can be performed using standard SPI Flash programmers or the Infineon FL-S development ecosystem.

Also Consider

MT25QL01GBBB8E12-0SIT Micron Technology Inc. - Provides a similar 1Gbit capacity with support for both 1.8V and 3V logic levels depending on specific sub-variant.