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Si823H2AD-IS3

Si823H2AD-IS3

MPN: SI823H2AD-IS3
Skyworks Solutions Inc.
6A Gate Driver Capacitive Coupling 5000Vrms 1 Channel 14-SOIC
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Overview

The Si823H2AD-IS3 is a high-performance isolated gate driver utilizing Skyworks' proprietary capacitive coupling technology to provide 5000Vrms isolation. It features a peak output current of 6A and is designed to drive power MOSFETs and IGBTs with high-speed switching requirements. The device includes integrated safety features like over-temperature protection and undervoltage lockout (UVLO) to ensure reliable operation in demanding power environments.

Why Choose This Part

This driver offers exceptional timing characteristics with a 12ns typical rise and fall time, enabling high-frequency operation with minimal switching losses. The 5000Vrms isolation rating and wide operating temperature range of -40C to 125C make it suitable for harsh industrial and automotive environments. Additionally, the high 6A peak output current allows it to drive large gate charge power transistors without external buffers.

Applications

On-Board Chargers (OBC)
Provides isolated high-side and low-side gate drive for AC/DC conversion stages in electric vehicles.
Solar Inverters
Manages high-frequency switching in DC/AC power conversion for renewable energy systems.
Industrial Motor Drives
Drives power stages in variable frequency drives (VFDs) and servo controllers requiring robust noise immunity.
Isolated DC-DC Converters
Facilitates high-efficiency power delivery in telecommunications and data center power bricks.

Key Specifications

Technology Capacitive Coupling
Mounting Type Surface Mount
Package / Case 14-SOIC (0.295", 7.50mm Width)
Approval Agency CQC, CSA, UL, VDE
Number of Channels 1
Voltage - Isolation 5000Vrms
Current - Peak Output 6A
Operating Temperature -40degC ~ 125degC
Rise / Fall Time (Typ) 12ns, 12ns (Max)
Supplier Device Package 14-SOIC
Voltage - Output Supply 5.5V ~ 30V
Current - Output High, Low 4A, 4A
Pulse Width Distortion (Max) 5ns
Propagation Delay tpLH / tpHL (Max) 30ns, 30ns
Common Mode Transient Immunity (Min) 125kV/us

Getting Started

To evaluate this part, use the Si823H-KIT evaluation board which allows for testing of the driver's timing and drive strength. Ensure that the VDD supply (5.5V to 30V) is properly bypassed with low-ESR ceramic capacitors placed close to the device pins. Designers should pay close attention to the PCB layout to minimize parasitic inductance in the high-current gate drive loops.

Also Consider

UCC21520 TITexas Instruments - Offers dual-channel isolation with similar peak current and high CMTI for robust switching performance.
Si823H2BD-IS3 Skyworks Solutions Inc. - Similar performance but features a different UVLO threshold for compatibility with different power MOSFET types.
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