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SQJQ100EL-T1_GE3

SQJQ100EL-T1_GE3

Vishay Siliconix
N-Channel 40 V 200A (Tc) 150W (Tc) Surface Mount PowerPAK® 8 x 8
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Overview

The SQJQ100EL-T1_GE3 is a high-performance N-Channel 40V TrenchFET power MOSFET housed in a PowerPAK 8 x 8L package. This AEC-Q101 qualified device is engineered for extreme current demands, supporting up to 200A continuous drain current and offering an ultra-low maximum RDS(on) of 1.2mOhm at 10V Vgs. Its robust construction allows for reliable operation in harsh environments with a maximum junction temperature of 175 degrees Celsius.

Why Choose This Part

The primary advantage is the exceptionally low 1.2mOhm on-resistance, which significantly reduces conduction losses in high-current paths. The PowerPAK 8 x 8 package provides superior thermal dissipation (150W max) compared to standard TO-220 or D2PAK footprints while maintaining a low profile. Furthermore, the AEC-Q101 qualification and 175 degrees Celsius rating ensure long-term reliability in demanding automotive and industrial thermal cycles.

Applications

Automotive Motor Drives
Ideal for high-current brushed or brushless DC motor control in automotive applications like electric power steering and braking systems.
Battery Management Systems
Used as a high-side or low-side protection switch in high-capacity EV battery packs to manage charge and discharge paths.
DC/DC Converters
Serves as a high-efficiency synchronous rectifier or switching element in low-voltage, high-power density power supplies.
Power Distribution Units
Efficiently switches heavy loads in 12V and 24V vehicle electrical systems with minimal thermal overhead.

Key Specifications

FET Type N-Channel
Vgs (Max) +/-20V
Technology MOSFET (Metal Oxide)
Mounting Type Surface Mount
Package / Case PowerPAK 8 x 8
Vgs(th) (Max) @ Id 2.5V @ 250uA
Operating Temperature -55degC ~ 175degC (TJ)
Rds On (Max) @ Id, Vgs 1.2mOhm @ 20A, 10V
Power Dissipation (Max) 150W (Tc)
Supplier Device Package PowerPAK 8 x 8
Gate Charge (Qg) (Max) @ Vgs 220 nC @ 10 V
Drain to Source Voltage (Vdss) 40 V
Input Capacitance (Ciss) (Max) @ Vds 14500 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25degC 200A (Tc)

Getting Started

When integrating this MOSFET, prioritize PCB thermal management by utilizing multiple thermal vias under the PowerPAK drain pad to internal copper planes. Ensure the gate driver can source and sink sufficient peak current to manage the high gate charge for fast switching. Use high-power layout techniques, such as thick copper pours, to handle the 200A rated current without excessive trace heating.