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STD1NK60T4

STD1NK60T4

STMicroelectronics
N-Channel 600 V 1A (Tc) 30W (Tc) Surface Mount DPAK
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Overview

The STD1NK60T4 is an N-channel SuperMESH power MOSFET designed for high-voltage switching applications. It features a 600V breakdown voltage and a continuous drain current of 1A, making it suitable for low-power offline power supplies and ballast circuits. The device is housed in a compact surface-mount DPAK package to optimize board space in power-constrained designs.

Why Choose This Part

This MOSFET offers a high 600V VDS rating with a 30W power dissipation capability in a standard DPAK footprint. Its SuperMESH technology provides improved gate charge characteristics and low intrinsic capacitances for efficient high-speed switching.

Applications

Small SMPS
Used as the primary switch in low-wattage offline switch-mode power supplies for consumer electronics.
Electronic Ballasts
Integrated into lighting control circuits and fluorescent lamp ballasts requiring high-voltage durability.
Auxiliary Power Supplies
Provides power for housekeeping circuits within larger industrial systems.
Level Shifting
High-side switching or level translation in circuits where voltage rails exceed standard 100V limits.

Key Specifications

FET Type N-Channel
Vgs (Max) +/-30V
Technology MOSFET (Metal Oxide)
Mounting Type Surface Mount
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Vgs(th) (Max) @ Id 3.7V @ 250uA
Operating Temperature -55degC ~ 150degC (TJ)
Rds On (Max) @ Id, Vgs 8.5Ohm @ 500mA, 10V
Power Dissipation (Max) 30W (Tc)
Supplier Device Package DPAK
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V
Drain to Source Voltage (Vdss) 600 V
Input Capacitance (Ciss) (Max) @ Vds 156 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25degC 1A (Tc)

Getting Started

When designing with this MOSFET, ensure the Vgs remains within the +/-30V limits and provide adequate copper area on the DPAK tab for thermal management. Use a standard MOSFET gate driver or a discrete push-pull circuit to handle the gate capacitance for switching frequencies above 50kHz.