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STN1HNK60

STN1HNK60

STMicroelectronics
N-Channel 600 V 400mA (Tc) 3.3W (Tc) Surface Mount SOT-223
Active1,358 in stock
Datasheet Digi-Key Compare Prices

Overview

The STN1HNK60 is a high-voltage N-channel power MOSFET designed using STMicroelectronics proprietary SuperMESH technology. It features a 600V breakdown voltage and is housed in a compact SOT-223 surface-mount package, making it suitable for applications where PCB space is limited but high-voltage switching is required. The device is 100 percent avalanche tested to ensure reliability in demanding inductive switching environments.

Why Choose This Part

This MOSFET offers an extremely high dv/dt capability and minimized gate charge to reduce switching losses. Its 600V rating provides significant headroom for offline applications, while the SOT-223 package offers a balance between thermal performance and a small footprint compared to traditional TO-220 packages.

Applications

Small Form Factor Power Supplies
Ideal for compact offline AC-DC converters where low current and high voltage handling are required.
LED Driver Stages
Used as a primary switching element in low-power LED lighting circuits and ballast controllers.
Auxiliary Power Supplies
Commonly used in standby power circuits for industrial and consumer appliances.
DC-DC Converters
Serves as a high-side switch in high-voltage DC-to-DC conversion modules.

Key Specifications

FET Type N-Channel
Vgs (Max) +/-30V
Technology MOSFET (Metal Oxide)
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Vgs(th) (Max) @ Id 3.7V @ 250uA
Operating Temperature -55degC ~ 150degC (TJ)
Rds On (Max) @ Id, Vgs 8.5Ohm @ 500mA, 10V
Power Dissipation (Max) 3.3W (Tc)
Supplier Device Package SOT-223
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V
Drain to Source Voltage (Vdss) 600 V
Input Capacitance (Ciss) (Max) @ Vds 156 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25degC 400mA (Tc)

Getting Started

When integrating this part, ensure the SOT-223 thermal pad has sufficient copper pour area to handle the 3.3W maximum power dissipation. Use a standard MOSFET gate driver or logic-level shifter if the driving signal cannot meet the 3.7V gate threshold voltage at the desired drain current.

STN1 Family

Comparing specs that differ across variants. The current part is highlighted.

Part Number Vgs (Max) Vgs(th) (Max) @ Id Rds On (Max) @ Id, Vgs Power Dissipation (Max) Gate Charge (Qg) (Max) @ Vgs Drain to Source Voltage (Vdss) Stock
STN1HNK60 (this part) +/-30V 3.7V 8.5Ohm @ 500mA, 10V 3.3W (Tc) 10 nC @ 10 V 600 V 1,358
STN1NF20 +/-20V 4V 1.5Ohm @ 500mA, 10V 2W (Ta) 5.7 nC @ 10 V 200 V 23,455