EmbeddedRelated.com
The 2026 Embedded Online Conference
    Parts    STP55NF06
STP55NF06

STP55NF06

STMicroelectronics
TO-220 N-channel MOSFET with comparable use cases for 12/24 V power switching and motor control.
Active28,414 in stock
Datasheet Digi-Key Compare Prices

Overview

The STP55NF06 is an N-channel STripFET II power MOSFET designed for high-efficiency switching applications. It supports a drain-source voltage of 60V and a continuous drain current of up to 50A, making it suitable for low-voltage power management and motor drive circuits. The device is housed in a standard TO-220 through-hole package for easy heat sinking and prototyping.

Why Choose This Part

With a maximum Rds(on) of 18mOhm at 10V Vgs, this MOSFET minimizes conduction losses in high-current paths. It features a high operating junction temperature of 175 degrees Celsius and exceptional dv/dt capability, ensuring reliability in demanding thermal environments and noisy switching conditions.

Applications

DC Motor Speed Control
Ideal for PWM-based speed control of 12V or 24V brushed DC motors in industrial or automotive tools.
DC-DC Converters
Used as a switching element in isolated or non-isolated power converters for telecom and computing hardware.
Solenoid and Relay Drivers
Provides robust switching for high-current inductive loads with its 100 percent avalanche tested rating.
Battery Protection Circuits
Acts as a low-resistance disconnect switch in 12V-48V battery management systems.

Key Specifications

FET Type N-Channel
Vgs (Max) +/-16V
Technology MOSFET (Metal Oxide)
Mounting Type Through Hole
Package / Case TO-220-3
Vgs(th) (Max) @ Id 1.7V @ 250uA
Operating Temperature -55degC ~ 175degC (TJ)
Rds On (Max) @ Id, Vgs 18mOhm @ 27.5A, 10V
Power Dissipation (Max) 95W (Tc)
Supplier Device Package TO-220
Gate Charge (Qg) (Max) @ Vgs 37 nC @ 4.5 V
Drain to Source Voltage (Vdss) 60 V
Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Current - Continuous Drain (Id) @ 25degC 55A (Tc)

Getting Started

When designing with the STP55NF06, ensure a gate resistor is used to manage switching speeds and prevent ringing. For high-current applications exceeding a few amps, mount the TO-220 package to an appropriately sized aluminum heatsink to manage the 95W maximum power dissipation. Use a logic-level shifter if driving from a 3.3V MCU, as the Vgs(th) can be as high as 1.7V but requires higher voltage for full saturation.

Also Consider

IRFZ44N IFXInfineon Technologies - A common alternative with similar voltage ratings and current capacity often used in hobbyist and industrial designs.
The 2026 Embedded Online Conference