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    Parts    TK100E10N1,S1X
TK100E10N1

TK100E10N1

MPN: TK100E10N1,S1X
Toshiba Semiconductor and Storage
N-Channel 100 V 100A (Ta) 255W (Tc) Through Hole TO-220
Active1,008 in stock
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Overview

The TK100E10N1 is a high-power N-channel MOSFET designed for high-efficiency power conversion and switching. Rated for 100V and 100A, it utilizes Toshiba's advanced technology to achieve an extremely low Rds(on) of 3.4mOhm. This through-hole TO-220 device is optimized for thermal management in demanding industrial and automotive power environments.

Why Choose This Part

The primary advantage is the exceptionally low Rds(on) of 3.4mOhm at 10V Vgs, which significantly reduces conduction losses and heat generation. Its high power dissipation rating of 255W and 150 degree Celsius junction temperature support robust operation under heavy loads. The TO-220 package allows for easy heatsink mounting, making it ideal for systems where thermal management is a critical design constraint.

Applications

DC-DC Converters
High-efficiency synchronous rectification and primary side switching in industrial power supplies.
Motor Drivers
H-bridge configurations for high-current BLDC and brushed DC motors in robotics and industrial automation.
Battery Management Systems
High-side or low-side protection switches for large battery packs in electric vehicles and energy storage.
Uninterruptible Power Supplies (UPS)
Inverter stages and power switching circuits requiring low conduction losses.

Key Specifications

FET Type N-Channel
Vgs (Max) +/-20V
Technology MOSFET (Metal Oxide)
Mounting Type Through Hole
Package / Case TO-220-3
Vgs(th) (Max) @ Id 4V @ 1mA
Operating Temperature 150degC (TJ)
Rds On (Max) @ Id, Vgs 3.4mOhm @ 50A, 10V
Power Dissipation (Max) 255W (Tc)
Supplier Device Package TO-220
Gate Charge (Qg) (Max) @ Vgs 140 nC @ 10 V
Drain to Source Voltage (Vdss) 100 V
Input Capacitance (Ciss) (Max) @ Vds 8800 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25degC 100A (Ta)

Getting Started

Ensure proper heatsink selection using the 255W thermal limit and use a dedicated gate driver IC to manage the gate charge for high-speed switching. When prototyping, provide adequate PCB copper thickness for the 100A current path to prevent localized heating near the TO-220 pins. Use a 10V gate drive voltage to achieve the specified 3.4mOhm resistance, as lower voltages will increase losses.

Also Consider

IRFB4110 IFXInfineon Technologies - An industry-standard 100V TO-220 MOSFET widely used for high-power DC motor control.