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TS5A3159DBVR

TITS5A3159DBVR

Texas Instruments
1 Circuit IC Switch 2:1 1.1Ohm SOT-23-6
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Overview

The TS5A3159DBVR is a single-channel, high-speed SPDT analog switch designed to operate from 1.65V to 5.5V. It features a very low on-state resistance of 1.1 Ohm and a high bandwidth of 100MHz, making it suitable for both signal switching and power routing. The device includes break-before-make circuitry to prevent signal distortion during switching transitions.

Why Choose This Part

The component offers an excellent balance of low ON-resistance (1.1 Ohm) and low charge injection (36pC), minimizing signal loss and switching noise. Its 5V tolerant control inputs allow for interfacing with higher-voltage logic even when operating at a lower supply voltage. Furthermore, the break-before-make feature ensures that there is no momentary shorting between the two ports during a switch transition.

Applications

Audio Signal Routing
Utilizing low total harmonic distortion and 1.1 Ohm on-resistance to switch between different audio sources or outputs.
Sample-and-Hold Circuits
The low charge injection of 36pC and low leakage current make it ideal for precision analog sampling.
Battery-Powered Portables
Drawing only 0.1 uA of supply current, it is highly efficient for mobile and handheld power management.
Communication Systems
The 100MHz bandwidth supports high-speed signal switching in telecommunication and networking hardware.

Key Specifications

Crosstalk -65dB @ 1MHz
Mounting Type Surface Mount
-3db Bandwidth 100MHz
Package / Case SOT-23-6
Switch Circuit SPDT
Charge Injection 36pC
Number of Circuits 1
Operating Temperature -40degC ~ 85degC (TA)
Supplier Device Package SOT-23-6
On-State Resistance (Max) 1.1Ohm
Switch Time (Ton, Toff) (Max) 35ns, 20ns
Voltage - Supply, Single (V+) 1.65V ~ 5.5V
Current - Leakage (IS(off)) (Max) 2nA
Multiplexer/Demultiplexer Circuit 2:1
Channel Capacitance (CS(off), CD(off)) 23pF
Channel-to-Channel Matching (ΔRon) 100mOhm

Getting Started

When designing with this SOT-23-6 package, ensure decoupling capacitors are placed near the V+ pin for stable performance. Engineers should verify that the analog signal levels remain between GND and V+ to prevent internal ESD diode conduction. Evaluation can be performed by prototyping on a standard SOT-23-6 breakout board with 0.1uF bypass capacitors.