VSMY2850G
Overview
The VSMY2850G is a high-power infrared emitting diode based on Surface-Emitter technology, operating at an 850nm peak wavelength. It features a narrow 20-degree viewing angle and high radiant intensity of 70mW/sr, making it ideal for applications requiring focused long-range IR signals in a compact gull-wing SMD package.
Why Choose This Part
This emitter supports high pulse current operation up to 1A, allowing for increased range in pulsed sensing modes. Its Surface-Emitter technology provides superior radiant intensity compared to standard emitters, while the gull-wing package simplifies PCB inspection.
Applications
Key Specifications
Getting Started
To integrate this emitter, design a constant-current driver or use a current-limiting resistor calculated for a typical forward voltage of 1.6V at 100mA. Ensure the PCB thermal pad layout accounts for power dissipation during continuous operation, and pair it with a 850nm silicon phototransistor or PIN photodiode for optimal signal reception.




