DIOZXMN7A11GQTA
Overview
The ZXMN7A11GQTA is an automotive-qualified N-channel MOSFET designed by Diodes Incorporated, featuring a 70V drain-source voltage rating and a 2.7A continuous drain current at 25 degrees Celsius. It is housed in a compact SOT-223 package, making it suitable for space-constrained power management and switching tasks. This component is AEC-Q101 qualified, ensuring high reliability in harsh environments.
Why Choose This Part
The device offers a low gate threshold voltage of 1V, allowing it to be driven directly by many low-voltage microcontrollers. Its SOT-223 package provides a balance between thermal performance and board area, supporting up to 2W of power dissipation. Furthermore, its AEC-Q101 qualification makes it a robust choice for automotive-grade reliability.
Applications
Key Specifications
Getting Started
When designing with this MOSFET, ensure adequate PCB copper area is provided around the drain tab of the SOT-223 package to manage the 2W thermal dissipation limit. Use a standard logic-level gate driver or a direct MCU GPIO pin, keeping in mind the +/-20V Vgs limit and the 130mOhm RDS(on) at 10V gate drive.



