I'm using an AT45DB011B serial DataFlash from atmel. In the datasheet
I cannot find any information on the maximum number of flash writes
that can be made to the chip. Do any of you have information on this.
Jardar
Endurance of DataFlash from ATMEL
Started by ●February 7, 2003
Reply by ●February 7, 20032003-02-07
gronganjana wrote:
>I'm using an AT45DB011B serial DataFlash from atmel. In the datasheet
>I cannot find any information on the maximum number of flash writes
>that can be made to the chip. Do any of you have information on this. >
>
>Jardar >
>
>To unsubscribe from this group, send an email to:
>avrclub-unsubscribe@avrc... >
>">http://docs.yahoo.com/info/terms/ >
>
Not for this particular ic, but normally we expect the reprogrammability
of flash is minimum 1000 times.
prasad
>I'm using an AT45DB011B serial DataFlash from atmel. In the datasheet
>I cannot find any information on the maximum number of flash writes
>that can be made to the chip. Do any of you have information on this. >
>
>Jardar >
>
>To unsubscribe from this group, send an email to:
>avrclub-unsubscribe@avrc... >
>">http://docs.yahoo.com/info/terms/ >
>
Not for this particular ic, but normally we expect the reprogrammability
of flash is minimum 1000 times.
prasad
Reply by ●February 7, 20032003-02-07
This part is very different from the usual flash that is part of the
AVR CPU. The specification (see app note) is that memory is good for
10,000 erase/write cycles OF OTHER LOCATIONS. You must read and
rewrite a memory block every 10,000 erase/write cycles. Thus there is
NO specified maximum number of write cycles before the part may fail
but instead a requirement that you rewrite (and thus refresh) all
memory locations at least every 10,000 E/W cycles.
Andy
AVR CPU. The specification (see app note) is that memory is good for
10,000 erase/write cycles OF OTHER LOCATIONS. You must read and
rewrite a memory block every 10,000 erase/write cycles. Thus there is
NO specified maximum number of write cycles before the part may fail
but instead a requirement that you rewrite (and thus refresh) all
memory locations at least every 10,000 E/W cycles.
Andy
Reply by ●February 8, 20032003-02-08
--- In avrclub@avrc..., "gronganjana <raistlin@i...>"
<raistlin@i...> wrote:
> I'm using an AT45DB011B serial DataFlash from atmel. In the
datasheet
> I cannot find any information on the maximum number of flash
writes
> that can be made to the chip. Do any of you have information on
this.
A related question is interfacing with the DataFlash. Since it's a
3.6V max device with 5V tolerant inputs, going from a 5V AVR *to*
the DataFlash is fine.
It's going from Dataflash to AVR that gets sticky. For example, the
DataFlash claims a Voh (Output High Voltage) of min Vcc-0.2V, or
about 3.4V at most. The Mega8 has a Vih (Input High Voltage) of
0.7*VCC, or 3.5V min.
Won't work as far as I can see. Have to use a transistor to switch
on/off the MISO line ?
Dean.
<raistlin@i...> wrote:
> I'm using an AT45DB011B serial DataFlash from atmel. In the
datasheet
> I cannot find any information on the maximum number of flash
writes
> that can be made to the chip. Do any of you have information on
this.
A related question is interfacing with the DataFlash. Since it's a
3.6V max device with 5V tolerant inputs, going from a 5V AVR *to*
the DataFlash is fine.
It's going from Dataflash to AVR that gets sticky. For example, the
DataFlash claims a Voh (Output High Voltage) of min Vcc-0.2V, or
about 3.4V at most. The Mega8 has a Vih (Input High Voltage) of
0.7*VCC, or 3.5V min.
Won't work as far as I can see. Have to use a transistor to switch
on/off the MISO line ?
Dean.
